Simulation of Ldmos High Frequency Power Transistor

Two important properties of an RF LDMOS power transistor are the high-voltage performance and the high-frequency performance. This thesis begins with the design of an initial device model based on a Motorola RF LDMOS product. The effects of varying drift length, n-epi layer doping concentration and thickness are then investigated by simulation using Academi2d software. Each parameter is varied by 5 cases and the simulation results show the influence on breakdown voltage. Next, a new model is created after further optimization according to the results of earlier investigations. Properties like specific on resistance and I-V characteristics are evaluated. Furthermore, double drain diffusion technology is explored successfully. Another important operation of LDMOS is high-frequency operation. Characterisation of RF performance is complicated. In this project the focus is on highfrequency switching and gate charge characteristics.